Numerical Simulation and Experimental Realization of δ-doped Single Barrier Resonant Tunneling Diodes

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著者

    • Lin Jia-Chuan
    • Department of Electrical Engineering, National Cheng Kung University, Taiwan, R.O.C.
    • Wang Shui-Jinn
    • Department of Electrical Engineering, National Cheng Kung University, Taiwan, R.O.C.
    • Liou Wan-Rone
    • Department of Electrical Engineering, National Taiwan Ocean University, Taiwan, R.O.C.
    • Luo Ying-Che
    • Department of Electrical Engineering, National Cheng Kung University, Taiwan, R.O.C.
    • Cheng Ching-Yuan
    • Department of Electrical Engineering, National Cheng Kung University, Taiwan, R.O.C.

抄録

In this study, a new negative differential resistance (NDR) device based on a δ-doped single barrier resonant tunneling structure is presented. Numerical simulation is utilized to analyze the resonant tunneling mechanism of the proposed device. Calculated results reveal that the N-shaped NDR is due to the resonant tunneling through a quasibound state inside the V-shaped quantum well generated by the δ-doped layer. The peak doping concentration of the δ-doped layer in the barrier region plays a crucial role in determining both the onset and the peak-to-valley current ratio (PVCR) of the NDR. Preliminary experimental results based on the InGaAs/InP system grown by metalorganic chemical vapor deposition are reported for the first time. With a peak concentration of around 5×1018 cm-3 in the δ-doped layer, a strong NDR with a PVCR of about 1.11 at room temperature has been observed.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 35(2A), 568-573, 1996-02-15

    INSTITUTE OF PURE AND APPLIED PHYSICS

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各種コード

  • NII論文ID(NAID)
    10004349968
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • ISSN
    0021-4922
  • データ提供元
    CJP書誌  JSAP 
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