Antenna Charging Effects on the Electrical Characteristics of Polysilicon Gate during Electron Cyclotron Resonance Etching
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The nonuniformity of the induced leakage current in metal oxide semiconductor (MOS) capacitors has been investigated in an electron cyclotron resonance (ECR) system. For plasma-etched MOS capacitors with 5-nm-thick oxides, it is found that the leakage currents induced by plasma etching increase with increasing overetching time. However, additional E bd (breakdown field) degradation is not obvious as overetching percentage increases from 10% to 50%. A mechanism based on the antenna charging effect has been proposed to explain the E bd electrical characteristics. In accordance with the mechanism, the E bd degradation has been significantly reduced by first etching off a narrow peripheral edge around the gate pattern.
- Jpn J Appl Phys
Jpn J Appl Phys 35(2A), 578-583, 1996-02-15
INSTITUTE OF PURE AND APPLIED PHYSICS