Antenna Charging Effects on the Electrical Characteristics of Polysilicon Gate during Electron Cyclotron Resonance Etching

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著者

    • Kang Tzong-Kuei
    • Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University,
    • Ueng Shih-Yuan
    • Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University,
    • Dai Bau-Tong
    • National Nano Device Laboratory, Hsinchu, Taiwan R.O.C.
    • Cheng Huang-Chung
    • Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University,

抄録

The nonuniformity of the induced leakage current in metal oxide semiconductor (MOS) capacitors has been investigated in an electron cyclotron resonance (ECR) system. For plasma-etched MOS capacitors with 5-nm-thick oxides, it is found that the leakage currents induced by plasma etching increase with increasing overetching time. However, additional E bd (breakdown field) degradation is not obvious as overetching percentage increases from 10% to 50%. A mechanism based on the antenna charging effect has been proposed to explain the E bd electrical characteristics. In accordance with the mechanism, the E bd degradation has been significantly reduced by first etching off a narrow peripheral edge around the gate pattern.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 35(2A), 578-583, 1996-02-15 

    INSTITUTE OF PURE AND APPLIED PHYSICS

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各種コード

  • NII論文ID(NAID)
    10004349996
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • ISSN
    0021-4922
  • データ提供元
    CJP書誌  JSAP 
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