書誌事項
- タイトル別名
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- Rare-earth-doped SiO<sub>2</sub> Films Prepared by Plasma-enhanced Chemical Vapor Deposition -Development of Deposition Method and Application of Its Luminescence to Research in Physics-
- プラズマ CVDホウ ニ ヨル キドルイ テンカ シリカ ハクマク セイマクホウ ノ カイハツ ト ハッコウ ノ ブッセイ ケンキュウ エ ノ オウヨウ
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Rare-earth-doped thin SiO2 films were made by plasma-enhanced chemical vapor deposition using a complex containing chelating ligands and tetraethoxysilane. By this means of deposition, the film was successfully doped with terbium or erbium and the luminescence from the film was detected. Furthermore, by making a two-layered sample consisting of the terbiumdoped SiO2 film and non-doped SiO2 film or fluorine-doped SiO2 film and by examining the electroluminescence intensity, it was found that the acceleration of electrons by electric field is difficult in the fluorine-doped SiO2 film.
収録刊行物
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- 電気学会論文誌. A
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電気学会論文誌. A 119 (1), 113-117, 1999
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282679574740224
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- NII論文ID
- 130006838078
- 10004441753
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- NII書誌ID
- AN10136312
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- ISSN
- 13475533
- 03854205
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- NDL書誌ID
- 971643
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- データソース種別
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- JaLC
- NDL
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