Resistivity increment by solute vanadium in aluminum

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The contribution per unit concentration of solute vanadium to electrical resistivity of solid aluminum, Δρ<sup><i>V</i></sup>, and its temperature dependence were measured using high purity Al–V binary alloys. Δρ<sup><i>V</i></sup> at 77 K and 300 K are 37.6 and 37.0 nΩm·mass%<sup>−1</sup>, respectively, showing a small negative DMR (deviation from the Matthiessen's rule). After a prolonged heat treatment at 923 K, the decrease in the actual size factor due to oxidation of the specimen surface was observed. In the heat treatment temperature-resistivity (<i>T<sub>H</sub></i>–ρ) diagram, the resistivity of Al–V binary alloy calculated from reported equilibrium solubility values locates between those of Al–Ti and Al–Zr alloys. Since the large Δρ and very small diffusivity in aluminum, the vanadium content should be especially restricted in manufacturing or recycling processes of aluminum conductor alloys.

収録刊行物

  • 軽金属  

    軽金属 49(10), 476-480, 1999-10-30 

    The Japan Institute of Light Metals

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各種コード

  • NII論文ID(NAID)
    10004453430
  • NII書誌ID(NCID)
    AN00069773
  • 本文言語コード
    ENG
  • 資料種別
    SHO
  • ISSN
    04515994
  • NDL 記事登録ID
    4886570
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-284
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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