高周波マグネトロンスパッタ法によるMgO薄膜の結晶性へのN_2+Arガスの効果 Effect of N_2+Ar Gas on the Structure of MgO Thin Films Deposited by rf-Magnetron Sputtering
We report the effect of N<SUB>2</SUB> partial pressure on the structure of MgO thin film deposited on Si (100) substrates by rfmagnetron sputtering using single-crystal target and sintered target in Ar+ N<SUB>2</SUB> mixture. The films were evaluated using X-ray deffractmeter (XRD). We examined the change of (200) <SUB>MgO</SUB> reflection depending upon the change of background pressure and N<SUB>2</SUB> flowrate when single-crystal target and sintered target were used. From the result, it was shown that in the case of using single-crystal target and sintered target, the crystallinity suddenly improves when background pressure reaches its threshold. However, in the case of sintered target, we found out that an increase in N<SUB>2</SUB> flowrate does not affect the threshold background pressure (P<SUB>TH</SUB>) so much in comparison with single-crystal target. This is due to the large amount of H<SUB>2</SUB>O residual gas in sintered target as compared to single-crystal target.
真空 43(2), 135-139, 2000-02-20
The Vacuum Society of Japan