高周波マグネトロンスパッタ法によるMgO薄膜の結晶性へのN_2+Arガスの効果 Effect of N_2+Ar Gas on the Structure of MgO Thin Films Deposited by rf-Magnetron Sputtering

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We report the effect of N<SUB>2</SUB> partial pressure on the structure of MgO thin film deposited on Si (100) substrates by rfmagnetron sputtering using single-crystal target and sintered target in Ar+ N<SUB>2</SUB> mixture. The films were evaluated using X-ray deffractmeter (XRD). We examined the change of (200) <SUB>MgO</SUB> reflection depending upon the change of background pressure and N<SUB>2</SUB> flowrate when single-crystal target and sintered target were used. From the result, it was shown that in the case of using single-crystal target and sintered target, the crystallinity suddenly improves when background pressure reaches its threshold. However, in the case of sintered target, we found out that an increase in N<SUB>2</SUB> flowrate does not affect the threshold background pressure (P<SUB>TH</SUB>) so much in comparison with single-crystal target. This is due to the large amount of H<SUB>2</SUB>O residual gas in sintered target as compared to single-crystal target.

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  • 真空  

    真空 43(2), 135-139, 2000-02-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10004561428
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    05598516
  • NDL 記事登録ID
    5298177
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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