磁場中で作製したCo-Ag薄膜の磁気抵抗効果 Magnetoresistance of Co-Ag Films Deposited in a Magnetic Field by Magnetron Sputtering

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抄録

The magnetoresistive Co-Ag thin films were deposited on glass substrates in a magnetic field at room temperature by an rf magnetron sputtering system. The magnetoresistive properties of the as-deposited samples was investigated in relation to the intensity of the bias magnetic field applied parallel or perpendicular to the film surface during deposition. Samples deposited in a bias magnetic field showed larger responses in magnetoresistance than that of samples prepared by the conventional sputtering. The magnetoresistive response of the samples deposited in a bias magnetic field increased with increasing intensity of the magnetic field, whereas no saturation of the trend was observed in the range of 9 mT for parallel and 150 mT for perpendicular configurations.

収録刊行物

  • 真空

    真空 43(3), 184-187, 2000-03-20

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10004561487
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    5360726
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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