磁場中で作製したＣｏ‐Ａｇ薄膜の磁気抵抗効果

• 西村 興男

  北海道工業技術研究所

• 外岡 和彦

  北海道工業技術研究所

書誌事項

タイトル別名

• Magnetoresistance of Co-Ag Films Deposited in a Magnetic Field by Magnetron Sputtering.
• ジバ チュウ デ サクセイ シタ Co Ag ハクマク ノ ジキ テイコウ コウカ

抄録

The magnetoresistive Co-Ag thin films were deposited on glass substrates in a magnetic field at room temperature by an rf magnetron sputtering system. The magnetoresistive properties of the as-deposited samples was investigated in relation to the intensity of the bias magnetic field applied parallel or perpendicular to the film surface during deposition. Samples deposited in a bias magnetic field showed larger responses in magnetoresistance than that of samples prepared by the conventional sputtering. The magnetoresistive response of the samples deposited in a bias magnetic field increased with increasing intensity of the magnetic field, whereas no saturation of the trend was observed in the range of 9 mT for parallel and 150 mT for perpendicular configurations.

収録刊行物

• 真空

  真空 43 (3), 184-187, 2000

  一般社団法人 日本真空学会

キーワード

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

詳細情報

• CRID: 1390282679040360320
• NII論文ID: 10004561487
• NII書誌ID: AN00119871
• DOI: 10.3131/jvsj.43.184
• ISSN: 18809413
• ISSN: 05598516
• NDL書誌ID: 5360726
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5360726
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可