Magnetoresistance of Co-Ag Films Deposited in a Magnetic Field by Magnetron Sputtering.

• NISHIMURA Okio

  Hokkaido National Industrial Research Institute

• TONOOKA Kazuhiko

  Hokkaido National Industrial Research Institute

Bibliographic Information

Other Title

• 磁場中で作製したＣｏ‐Ａｇ薄膜の磁気抵抗効果
• ジバ チュウ デ サクセイ シタ Co Ag ハクマク ノ ジキ テイコウ コウカ

Abstract

The magnetoresistive Co-Ag thin films were deposited on glass substrates in a magnetic field at room temperature by an rf magnetron sputtering system. The magnetoresistive properties of the as-deposited samples was investigated in relation to the intensity of the bias magnetic field applied parallel or perpendicular to the film surface during deposition. Samples deposited in a bias magnetic field showed larger responses in magnetoresistance than that of samples prepared by the conventional sputtering. The magnetoresistive response of the samples deposited in a bias magnetic field increased with increasing intensity of the magnetic field, whereas no saturation of the trend was observed in the range of 9 mT for parallel and 150 mT for perpendicular configurations.

Journal

• Shinku

  Shinku 43 (3), 184-187, 2000

  The Vacuum Society of Japan

Keywords

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

Details

• CRID: 1390282679040360320
• NII Article ID: 10004561487
• NII Book ID: AN00119871
• DOI: 10.3131/jvsj.43.184
• ISSN: 18809413
• ISSN: 05598516
• NDL BIB ID: 5360726
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5360726
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed