zカットLiNbO_3基板上へのZnOスパッタ薄膜の形成 Deposition of ZnO Thin Films on z-cut LiNbO_3 Substrates Using Sputtering Technique
We have reported formation of ZnO thin films deposited on z-cut LiNbO<SUB>3</SUB> substrates using RF-sputtering technique. The substrate temperatures during deposition were changed from 300 to 703 K in various oxygen-argon atmospheres. ZnO (002) peak intensity depending on gas flow rate of oxygen to argon, substrate temperature and anneal temperature were observed. The film showed the crystalline growth highly oriented at  direction, when the film on z-cut LiNbO<SUB>3</SUB> substrate was deposited at 603 K in Ar (80%) +O<SUB>2</SUB> (20%) gas or annealed at 890 K in argon atmosphere.
真空 43(3), 193-196, 2000-03-20
The Vacuum Society of Japan