Deposition of ZnO Thin Films on z-cut LiNbO3 Substrates Using Sputtering Technique.

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  • YAMAMOTO Hideki
    Department of Electronic Control Engineering, Yonago National College of Technology
  • SAIGA Noriaki
    Department of Electronic Control Engineering, Yonago National College of Technology
  • NISHIMORI Katsumi
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Tottori University

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Other Title
  • ｚカットＬｉＮｂＯ３基板上へのＺｎＯスパッタ薄膜の形成
  • zカット LiNbO3 キバン ジョウ エ ノ ZnO スパッタ ハクマク ノ ケイセイ

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Abstract

We have reported formation of ZnO thin films deposited on z-cut LiNbO3 substrates using RF-sputtering technique. The substrate temperatures during deposition were changed from 300 to 703 K in various oxygen-argon atmospheres. ZnO (002) peak intensity depending on gas flow rate of oxygen to argon, substrate temperature and anneal temperature were observed. The film showed the crystalline growth highly oriented at [002] direction, when the film on z-cut LiNbO3 substrate was deposited at 603 K in Ar (80%) +O2 (20%) gas or annealed at 890 K in argon atmosphere.

Journal

  • Shinku

    Shinku 43 (3), 193-196, 2000

    The Vacuum Society of Japan

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