シリコン成長各期における点欠陥の平衡濃度 Equilibrium Concentration of Point Defects under Various Stages in Growing Silicon Crystal
Equilibrium concentration of point defects under various stages in growing silicon crystal is theoretically examined. Formulas of concentration of point defects corresponding to solid-liquid interface, early cooling stage and including secondary defects are proposed. It is suggested that equilibrium concentration is not unique and that previous consideration is not applied for actual crystal growth.
真空 43(3), 205-208, 2000-03-20
The Vacuum Society of Japan