六方晶窒化ホウ素の表面偏析の促進 Enhancement of h-BN Surface Segregation
The synthesis of uniform hexagonal boron nitride layer was enhanced by surface segregation method using a r. f. magnetron sputtering system utilizing a helicon wave nitrogen plasma and in-situ annealing in an ultrahigh vacuum. Scanning Auger spectroscopy and X-ray photoelectron spectroscopy analyses showed that the deposited film surface was almost covered with the h-BN layer segregated after the annealing at 800 K. The surface of h-BN layer was found to have the attractive force less than 1 nN and the good insulating property up to 3 V. These surface properties can be applied to fabricate nano scale structure and electric micro devices as an advanced substrate.
真空 43(3), 243-246, 2000-03-20
The Vacuum Society of Japan