Enhancement of h-BN Surface Segregation.

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Other Title
  • 六方晶窒化ホウ素の表面偏析の促進
  • 6ポウショウ チッカ ホウソ ノ ヒョウメンヘンセキ ノ ソクシン

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Abstract

The synthesis of uniform hexagonal boron nitride layer was enhanced by surface segregation method using a r. f. magnetron sputtering system utilizing a helicon wave nitrogen plasma and in-situ annealing in an ultrahigh vacuum. Scanning Auger spectroscopy and X-ray photoelectron spectroscopy analyses showed that the deposited film surface was almost covered with the h-BN layer segregated after the annealing at 800 K. The surface of h-BN layer was found to have the attractive force less than 1 nN and the good insulating property up to 3 V. These surface properties can be applied to fabricate nano scale structure and electric micro devices as an advanced substrate.

Journal

  • Shinku

    Shinku 43 (3), 243-246, 2000

    The Vacuum Society of Japan

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