ゲート電極付き窒化ニオブフィールドエミッタの作製 Fabrication of Gated Niobium Nitride Field Emitter Array

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A gated niobium nitride field emitter array was fabricated by transfer mold method and etch back method, in order to show the feasibility of niobium nitride thin film as a cathode material of vacuum microelectronics devices. Silicon substrate was etched to have pyramidal mold and its surface was oxidized. Niobium nitride thin film was deposited onto the oxidized mold by ion beam assisted deposition. After the deposition, sample was bonded to glass plate and the silicon mold was removed by mechanical and chemical etching. After etching, molybdenum gate was deposited and the gate aperture was fabricated by etch back process. The electron emission property was measured in high vacuum and field emission was confirmed.

収録刊行物

  • 真空  

    真空 43(3), 251-254, 2000-03-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10004561617
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    5360915
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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