Fabrication of Gated Niobium Nitride Field Emitter Array.

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  • GOTOH Yasuhito
    Department of Electronic Science and Engineering, Kyoto University
  • KASHIWAGI Yu
    Department of Electronic Science and Engineering, Kyoto University
  • NAGAO Masayoshi
    Department of Electronic Science and Engineering, Kyoto University
  • TSUJI Hiroshi
    Department of Electronic Science and Engineering, Kyoto University
  • ISHIKAWA Junzo
    Department of Electronic Science and Engineering, Kyoto University

Bibliographic Information

Other Title
  • ゲート電極付き窒化ニオブフィールドエミッタの作製
  • ゲート デンキョク ツキ チッカ ニオブフィ ルドエミッタ ノ サクセイ

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Abstract

A gated niobium nitride field emitter array was fabricated by transfer mold method and etch back method, in order to show the feasibility of niobium nitride thin film as a cathode material of vacuum microelectronics devices. Silicon substrate was etched to have pyramidal mold and its surface was oxidized. Niobium nitride thin film was deposited onto the oxidized mold by ion beam assisted deposition. After the deposition, sample was bonded to glass plate and the silicon mold was removed by mechanical and chemical etching. After etching, molybdenum gate was deposited and the gate aperture was fabricated by etch back process. The electron emission property was measured in high vacuum and field emission was confirmed.

Journal

  • Shinku

    Shinku 43 (3), 251-254, 2000

    The Vacuum Society of Japan

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