GaAs/Al_xGa_<1-x>As超格子の反射電子像の解析 Analysis of Backscattered Electron Images of GaAs/Al_xGa_<1-x>As Superlattices
The backscattered electron signals from GaAs/Al<SUB>x</SUB>Ga<SUB>1-x</SUB>As superlattice structures are studied with the Monte Carlo simulation of electron scattering. The following results have been obtained. The high resolution observation of GaAs/Al<SUB>x</SUB>Ga<SUB>1-x</SUB>As superlattice structures is achieved by detecting the low-loss backscattered electrons. The minimum detectable mean atomic number variation is 2.7 for 2 nm GaAs/2 nm Al<SUB>x</SUB>Ga<SUB>1-x</SUB>As superlatice with the low-loss backscattered electron signal. This value agrees with the experimental result.
真空 43(3), 255-258, 2000-03-20
The Vacuum Society of Japan