ラジカルビーム源を用いたパルスレーザー堆積法による窒化炭素薄膜の合成と評価 Synthesis and Characterization of Carbon Nitride Thin Films by Pulsed Laser Deposition Using Radical Beam Source

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Carbon nitride (CN<SUB><I>x</I></SUB> ) thin films were deposited on Corning #7059 glass and Si (100) substrates by pulsed laser deposition (PLD) using a radical beam source. The deposited films were characterized by SEM, XRD, XPS, FT-IR, and Raman spectroscopy. Nitrogen content in the films increased with increasing RF power and N<SUB>2</SUB> gas pressure in the deposition chamber. A film with N/C atomic ratio of 0.25 was obtained at 400 W of RF power and 1.3 Pa of N<SUB>2</SUB>. N 1s XPS spectra show the existence of N-<I>sp</I><SUP>2</SUP>C and N-<I>sp</I><SUP>3</SUP>C bonds in the films. The fraction of N-<I>sp</I><SUP>3</SUP>C increased with increasing nitrogen content in the film. FT-IR and Raman spectra of the deposited films indicated that N-<I>sp</I>C (N≡C) bond in the deposited films were few. The N/C atomic ratio decreased with increasing heat-treatment temperature. The fraction of N-<I>sp</I><SUP>2</SUP>C increased with increasing heat-treatment temperature. Heat-treatment of the film caused growth of graphitic domains in the film.

収録刊行物

  • 真空

    真空 43(3), 273-276, 2000-03-20

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10004561665
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    5360974
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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