Synthesis and Characterization of Carbon Nitride Thin Films by Pulsed Laser Deposition Using Radical Beam Source.

• ONO Kojiro

  Faculty of Science and Technology, Ryukoku University

• SAKURADA Kunio

  龍谷大学理工学部

• AOI Yoshifumi

  龍谷大学理工学部

• KAMIJO Eiji

  龍谷大学理工学部

Bibliographic Information

Other Title

• ラジカルビーム源を用いたパルスレーザー堆積法による窒化炭素薄膜の合成と評価
• ラジカルビーム ゲン オ モチイタ パルスレーザー タイセキホウ ニ ヨル チッカ タンソ ハクマク ノ ゴウセイ ト ヒョウカ

Abstract

Carbon nitride (CN_x ) thin films were deposited on Corning #7059 glass and Si (100) substrates by pulsed laser deposition (PLD) using a radical beam source. The deposited films were characterized by SEM, XRD, XPS, FT-IR, and Raman spectroscopy. Nitrogen content in the films increased with increasing RF power and N₂ gas pressure in the deposition chamber. A film with N/C atomic ratio of 0.25 was obtained at 400 W of RF power and 1.3 Pa of N₂. N 1s XPS spectra show the existence of N-sp²C and N-sp³C bonds in the films. The fraction of N-sp³C increased with increasing nitrogen content in the film. FT-IR and Raman spectra of the deposited films indicated that N-spC (N≡C) bond in the deposited films were few. The N/C atomic ratio decreased with increasing heat-treatment temperature. The fraction of N-sp²C increased with increasing heat-treatment temperature. Heat-treatment of the film caused growth of graphitic domains in the film.

Journal

• Shinku

  Shinku 43 (3), 273-276, 2000

  The Vacuum Society of Japan

Keywords

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

Details

• CRID: 1390001204063727488
• NII Article ID: 10004561665
• NII Book ID: AN00119871
• DOI: 10.3131/jvsj.43.273
• ISSN: 18809413
• ISSN: 05598516
• NDL BIB ID: 5360974
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5360974
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed