Ｓｉ基板上に製作したＡｕ／ｎ‐Ｇｅショットキー障壁ダイオードの電気的特性

• 吉本 智巳

  北海道東海大学

• 坂本 邦博

  電子技術総合研究所

• 岩田 達夫

  北海道東海大学

書誌事項

タイトル別名

• Electrical Characteristics of Au/n-Ge Schottky Barrier Diode Grown on Si Substrate.
• Si キバン ジョウ ニ セイサク シタ Au n Ge ショットキー ショウヘキ ダイオード ノ デンキテキ トクセイ

抄録

We have grown a Ge layer on Si (100) substrate and fabricated Au/n-Ge Schottky barrier diode. The Ge layer was grown by solid source molecular beam epitaxy (MBE). The growth procedure consisted of epitaxial growth of Ge layer using Sb as a surface-active-agent (surfactant) and high temperature (620°C) post growth annealing. The crystal structure was evaluated by reflection high-energy electron diffraction (RHEED) and the surface morphology was evaluated by atomic force microscopy (AFM). The RHEED pattern indicated the epitaxial growth of the Ge layer. Examination by AFM revealed some pits on the surface which were considered to be related to dislocation within the sample. The Sb surfactant worked as the donor in the epitaxial layer after the high temperature post growth annealing. The Sb concentration at the surface of the sample was 3 × 10¹⁷ cm^-3. The fabricated device showed the diode characteristics. The leakage current under the reverse bias condition was high and the ideal factor was large. It would seem that the reasons for the high leakage current and the large ideal factor were related to the pits on the surface of the sample.

収録刊行物

• 真空

  真空 43 (3), 277-279, 2000

  一般社団法人 日本真空学会

キーワード

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

詳細情報

• CRID: 1390282679040424960
• NII論文ID: 10004561673
• NII書誌ID: AN00119871
• DOI: 10.3131/jvsj.43.277
• ISSN: 18809413
• ISSN: 05598516
• NDL書誌ID: 5360981
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5360981
• 本文言語コード: ja
• データソース種別:
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