分子線成長In_<0.53>Ga_<0.47>As/GaAs_<0.5>Sb_<0.5>タイプII多重量子井戸層のフォトルミネセンスのドーピング依存性 [in Japanese] Doping Dependence of Photoluminescence Properties of In_<0.53>Ga_<0.47>As/GaAs_<0.5>Sb_<0.5> Type II Multiple Quantum Well Structures Grown by Molecular Beam Epitaxy [in Japanese]
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Photoluminescence (PL) properties of In<SUB>0.53</SUB>Ga<SUB>0.43</SUB>As/GaAs<SUB>0.5</SUB>Sb<SUB>0.5</SUB> type II multiple quantum well (MQW) structures lattice-matched to InP substrates grown by molecular beam epitaxy were studied. It was found that a tunneling assisted type II emission at about 2.3 μm showed a remarkable Si-doping dependence. The PL intensity of the type II emission was found to decrease drastically when the Si-doping concentration exceeds 2 × 10<SUP>17</SUP> cm<SUP>-3</SUP>, followed by a remarkable increase in the full width at half maximum (FWHM) of the PL spectrum. It became clear that the observed PL intensity decrease and the PL spectral broadening were related to Si-doping into the GaAsSb layers.
- Journal of the Vacuum Society of Japan
Journal of the Vacuum Society of Japan 43(3), 280-283, 2000-03-20
The Vacuum Society of Japan