分子線エピタキシー法によるGaAs(111)B上へのCdS薄膜の最適作製条件 Optimum Growth Conditions of CdS Thin Films Grown on GaAs(111)B by MBE

この論文にアクセスする

この論文をさがす

著者

    • 岡 喬 OKA Takashi
    • 大阪府立大学先端科学研究所 Institute for Advanced Science and Technology, Osaka Prefecture University

抄録

Optimum growth conditions of CdS thin films depositted on GaAs (111) B substrate by MBE were investigated. The films were characterized by full width at half maximum (FWHM) of X-ray diffraction (XRD) rocking curve, photoluminescence (PL), and surface morphology by scanning electron microscopy. The FWHM became minimum when the film was grown under the following conditions : The substrate temperature of 280°C, the ratio of molecular beam intensity of S to that of Cd about 1/1.5 and the interruption period of Cd supply for about 0.1 second. Although buffer layer depositted at 150°C for 15 seconds did not seem to affect the FWHM of the film, PL spectra indicated that the film with the buffer layer had better quality than that without the buffer layer. The roughness of the film surface was found to decrease by insertion of the buffer layer.

収録刊行物

  • 真空  

    真空 43(3), 284-287, 2000-03-20 

    The Vacuum Society of Japan

参考文献:  7件

参考文献を見るにはログインが必要です。ユーザIDをお持ちでない方は新規登録してください。

各種コード

  • NII論文ID(NAID)
    10004561686
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    5361044
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
ページトップへ