Xe_2エキシマーランプを用いた有機シリコン原料の気相における光分解 Photochemical Dissociation of Organic Silicon Source using Xe_2 Excimer Lamp in Gas Phase

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Photochemical dissociation of Tetraethoxysilane (TEOS) used as an organic silicon source in the gas phase was investigated by in-situ mass spectrometry. The vacuum uliraviolet (VUV) sources for inducing photochemical reaction were Xe<SUB>2</SUB> excimer lamp (172 nm : 7.2 eV) and Hg lamp (185 nm : 6.5 eV). TEOS was dissociated by irradiation of VUV in the gas phase, while releasing alkyl groups such as C<SUB>x</SUB>H<SUB>y</SUB> (x= 1-2, y=2-5). Moreover, almost all Si-O bonds of TEOS were not broken at the energy of Xe<SUB>2</SUB> excimer light. It has been found that the species produced by photochemical reaction in the gas phase have long lifetime of at least more than 2 minutes. Finally, the film deposited on the MgF<SUB>2</SUB> window has strong light absorption from visible to ultraviolet region, because the film contains organic compounds.

収録刊行物

  • 真空

    真空 43(3), 288-291, 2000-03-20

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10004561694
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    5361056
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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