高周波スパッタリング法を用いて作製した金属インジウム・酸化ガリウム光記録膜 Metal Indium and Gallium Oxide Optical Recording Films Prepared by Radio-Frequency Magnetron Sputtering

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著者

    • 青木 孝憲 AOKI Takanori
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 鈴木 晶雄 SUZUKI Akio
    • 大阪産業大学工学部電気電子工学科 Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
    • 奥田 昌宏 OKUDA Masahiro
    • 大阪府立大学工学部電子物理工学科 Department of Physics and Electronics, College of Engineering, University of Osaka Prefecture

抄録

Thin films of Ga-In oxide (150 nm) have been deposited on glass substrate at room temperature by radio-frequency (rf) magnetron sputtering with two targets of Ga<SUB>2</SUB>O<SUB>3</SUB> and metallic In, on which rf-powers of 150 W and 6080 W were added respectively. In the oxide films prepared by this method, the difference in the transmittance, <I>Δ</I> T, between the as-deposited state and the annealed state (400°C × 10 min) was more than 70% in the wavelength region of 350600 nm and at the wavelength of 320 nm, the value of <I>Δ</I>T of 42% was obtained. It was found from XRD spectra that (1) the In (101) peak was found in the as-deposited state (colored state) and (2) the In<SUB>2</SUB>O<SUB>3</SUB> (222) peak was formed in the annealed state (transparent state). It was recognized from XPS measurement that the phase transition between the as-deposited state and the annealed state well corresponded to the transition of In (colored state) →In<SUB>2</SUB>O<SUB>3</SUB> (transparent state). The ability to record on these oxide films without protection layer, using THG of Nd : YAG laser (δ=355 nm, 3 ns) was confirmed. These results will be useful for highly sensitive optical recording films with high density in the ultraviolet-blue wavelenght region.

収録刊行物

  • 真空  

    真空 43(3), 292-295, 2000-03-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10004561700
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    5361364
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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