高周波スパッタリング法を用いて作製した金属インジウム・酸化ガリウム光記録膜 Metal Indium and Gallium Oxide Optical Recording Films Prepared by Radio-Frequency Magnetron Sputtering
Thin films of Ga-In oxide (150 nm) have been deposited on glass substrate at room temperature by radio-frequency (rf) magnetron sputtering with two targets of Ga<SUB>2</SUB>O<SUB>3</SUB> and metallic In, on which rf-powers of 150 W and 6080 W were added respectively. In the oxide films prepared by this method, the difference in the transmittance, <I>Δ</I> T, between the as-deposited state and the annealed state (400°C × 10 min) was more than 70% in the wavelength region of 350600 nm and at the wavelength of 320 nm, the value of <I>Δ</I>T of 42% was obtained. It was found from XRD spectra that (1) the In (101) peak was found in the as-deposited state (colored state) and (2) the In<SUB>2</SUB>O<SUB>3</SUB> (222) peak was formed in the annealed state (transparent state). It was recognized from XPS measurement that the phase transition between the as-deposited state and the annealed state well corresponded to the transition of In (colored state) →In<SUB>2</SUB>O<SUB>3</SUB> (transparent state). The ability to record on these oxide films without protection layer, using THG of Nd : YAG laser (δ=355 nm, 3 ns) was confirmed. These results will be useful for highly sensitive optical recording films with high density in the ultraviolet-blue wavelenght region.
真空 43(3), 292-295, 2000-03-20
The Vacuum Society of Japan