スパッタ法によるInN薄膜-水素添加の影響- InN Films Prepared by Sputtering in N_2 and H_2-Effects of H_2 Pressure on Film Properties-

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Indium nitride thin films have been prepared by an rf magnetron sputtering from In target in N<SUB>2</SUB> and H<SUB>2</SUB> gas mixtures. The effects of H<SUB>2</SUB> partial pressure ratio <I>R</I> on the structural, optical and electrical properties of the films were investigated. With increasing <I>R</I>, the deposion rate of the films decreased, and the film structure was changed from crystalline phase with a hexagonal wurtzite structure to amorphous-like one. The bandgap, resistivity, carrier density and mobility also changed depending on <I>R</I>. In low <I>R</I> range, the resistivity was increased against <I>R</I>.

収録刊行物

  • 真空

    真空 43(3), 296-298, 2000-03-20

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10004561703
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    5361374
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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