スパッタ法によるInN薄膜-水素添加の影響- InN Films Prepared by Sputtering in N_2 and H_2-Effects of H_2 Pressure on Film Properties-
Indium nitride thin films have been prepared by an rf magnetron sputtering from In target in N<SUB>2</SUB> and H<SUB>2</SUB> gas mixtures. The effects of H<SUB>2</SUB> partial pressure ratio <I>R</I> on the structural, optical and electrical properties of the films were investigated. With increasing <I>R</I>, the deposion rate of the films decreased, and the film structure was changed from crystalline phase with a hexagonal wurtzite structure to amorphous-like one. The bandgap, resistivity, carrier density and mobility also changed depending on <I>R</I>. In low <I>R</I> range, the resistivity was increased against <I>R</I>.
真空 43(3), 296-298, 2000-03-20
The Vacuum Society of Japan