イオンビームスパッタリング法によるTiN/SiN_x積層多層薄膜の合成と評価 [in Japanese] Synthesis and Characterization of TiN/SiN_x Multilayered Thin Films by Ion Beam Sputtering [in Japanese]
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TiN/SiN<SUB><I>x</I></SUB> multilayered thin films were deposited on Corning #7059 glass substrates in an ion beam sputtering (IBS) system with a nitrogen assisted ion beam source. The multilayered thin films were deposited alternately using Ti and Si targets sputtered with the argon ion beam. Layer thickness λ (where λ is the period of the multilayer) ranged from 5 to 160 nm, and total film thickness was 400 nm. The multilayered thin films were examined by X-ray diffraction (XRD), cross-sectional scanning electron microscopy (SEM), micro-hardness, and microindentation hardness. Results are as follows : the high angle XRD showed a preferred orientation of TiN to  direction and the small angle XRD exhibited a diffraction pattern of a single-crystal superlattice, although the obtained films consisted of multilayers of microcrystal TiN and amorphous SiN<SUB><I>x</I></SUB>. Hardness of the deposited multilayered thin films indicated maximum against the multilayer periods. The maximum knoop hardness value of the obtained TiN/SiN<SUB><I>x</I></SUB> multilayered thin film was Hk=2376 kg mm<SUP>-2</SUP>.
- Journal of the Vacuum Society of Japan
Journal of the Vacuum Society of Japan 43(3), 299-302, 2000-03-20
The Vacuum Society of Japan