高周波-直流結合形マグネトロンスパッタ法によるWN_x薄膜の作製とCu/WN_x/Si構造の拡散バリア効果 [in Japanese] Preparation of WN_x Thin Films Using RF-DC Coupled Magnetron Sputtering and Diffusion Barrier Properties for Cu/WN_x/Si Samples [in Japanese]
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Tungsten nitride (WN<SUB>X</SUB>) thin films have been prepared using an RF-DC coupled magnetron sputtering system, in which the incident ion energy on the target can be controlled by the target DC bias voltage. The films were applied to Cu/WN<SUB>X</SUB>/Si samples and the obtained Cu (500 nm) /W<SUB>2</SUB>N (25 nm) /Si samples were stable without Cu-Si reaction after annealing at 700°C for 30 min. It was shown that the film composition (N/W) can be controlled by the target DC bias voltage without changing the gas flow ratio (N<SUB>2</SUB>/ (Ar+ N<SUB>2</SUB>)), and the N/W ratio was decreased from 0.8 to 0.2 only by increasing the target DC bias voltage from -100 V to -500 V, respectively, at the N<SUB>2</SUB>/ (Ar + N<SUB>2</SUB>) ratio of 0.2.
- Journal of the Vacuum Society of Japan
Journal of the Vacuum Society of Japan 43(3), 303-306, 2000-03-20
The Vacuum Society of Japan