高周波-直流結合形マグネトロンスパッタ法によるNiターゲットを用いた放電特性と直流バイアスによるNi薄膜の堆積速度制御効果 [in Japanese] Discharge Characteristics and Effect of DC Bias on the Deposition Rate of Ni Thin Films Using RF-DC Coupled Magnetron Sputtering [in Japanese]
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RF power and DC bias were simultaneously applied to a Ni target to control the incident ion energy on the target in a magnetron sputtering system equipped with Nd-Fe-B magnet assemblies. When Ni films were prepared at RF input power of 60 W and Ar partial pressure of 6.7×10<SUP>-1</SUP> Pa and DC bias voltage from -100 V to -500 V, the deposition rate linearly increased from about 9 nm/min to 70 nm/min. It was shown that the film growth coefficient (deposition rate/ion current density) of Ni films depends on the target DC bias voltage.
- Journal of the Vacuum Society of Japan
Journal of the Vacuum Society of Japan 43(3), 307-310, 2000-03-20
The Vacuum Society of Japan