高周波-直流結合形マグネトロンスパッタ法によるNiターゲットを用いた放電特性と直流バイアスによるNi薄膜の堆積速度制御効果 Discharge Characteristics and Effect of DC Bias on the Deposition Rate of Ni Thin Films Using RF-DC Coupled Magnetron Sputtering
RF power and DC bias were simultaneously applied to a Ni target to control the incident ion energy on the target in a magnetron sputtering system equipped with Nd-Fe-B magnet assemblies. When Ni films were prepared at RF input power of 60 W and Ar partial pressure of 6.7×10<SUP>-1</SUP> Pa and DC bias voltage from -100 V to -500 V, the deposition rate linearly increased from about 9 nm/min to 70 nm/min. It was shown that the film growth coefficient (deposition rate/ion current density) of Ni films depends on the target DC bias voltage.
真空 43(3), 307-310, 2000-03-20
The Vacuum Society of Japan