変形磁界型高周波マグネトロンスパッタ法によるNi薄膜の堆積速度 Deposition Rate of Ni Thin Films by Modified r.f.Magnetron Sputtering
In order to obtain high deposition rate of Ni films, we have developed a modified magnetron sputtering cathode configuration with a ferromagnetic Ni target of 100 mm in diameter and 5 mm in thickness. The plasma confinement could be enhanced by providing four special permanent magnets around outside the cathode. Nickel films were prepared at the rf power of 100 to 200 W and the argon gas pressure of 6.7×10<SUP>-1</SUP> to 8.1×10<SUP>-2</SUP> Pa. The deposition rate was 14 nm/min, four times as large as that of a conventional magnetron sputtering at an rf power of 100 W and an argon gas pressure of 6.7×10<SUP>-1</SUP>Pa.
真空 43(3), 311-313, 2000-03-20
The Vacuum Society of Japan