変形磁界型高周波マグネトロンスパッタ法によるNi薄膜の堆積速度 Deposition Rate of Ni Thin Films by Modified r.f.Magnetron Sputtering

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抄録

In order to obtain high deposition rate of Ni films, we have developed a modified magnetron sputtering cathode configuration with a ferromagnetic Ni target of 100 mm in diameter and 5 mm in thickness. The plasma confinement could be enhanced by providing four special permanent magnets around outside the cathode. Nickel films were prepared at the rf power of 100 to 200 W and the argon gas pressure of 6.7×10<SUP>-1</SUP> to 8.1×10<SUP>-2</SUP> Pa. The deposition rate was 14 nm/min, four times as large as that of a conventional magnetron sputtering at an rf power of 100 W and an argon gas pressure of 6.7×10<SUP>-1</SUP>Pa.

収録刊行物

  • 真空

    真空 43(3), 311-313, 2000-03-20

    The Vacuum Society of Japan

参考文献:  3件中 1-3件 を表示

  • <no title>

    TANAKA T.

    Thin Solid Films 343, 57, 1999

    被引用文献1件

  • <no title>

    SUZUKI M.

    Thin Solid Films 343, 21, 1999

    被引用文献1件

  • <no title>

    BREWER J. A.

    Proc.Annu.Tech.Conf.Soc.Vac.Coaters 33, 37, 1990

    被引用文献1件

各種コード

  • NII論文ID(NAID)
    10004561745
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    5361445
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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