Deposition Rate of Ni Thin Films by Modified r.f. Magnetron Sputtering.

• HARADA Takeshi

  Department of Electronics, Hiroshima Institute of Technology

• ASAHARA Hiroshi

  Department of Electronics, Hiroshima Institute of Technology

• KAWAMURA Tomohiko

  Department of Electronics, Hiroshima Institute of Technology

• SATO Yutaka

  Department of Electronics, Hiroshima Institute of Technology

• SHIMAMOTO Syogo

  Department of Electronics, Hiroshima Institute of Technology

• TANAKA Takeshi

  Department of Electronics, Hiroshima Institute of Technology

• KAWABATA Keishi

  Department of Electronics, Hiroshima Institute of Technology

Bibliographic Information

Other Title

• 変形磁界型高周波マグネトロンスパッタ法によるＮｉ薄膜の堆積速度
• ヘンケイ ジカイガタ コウシュウハ マグネトロンスパッタホウ ニ ヨル Ni ハクマク ノ タイセキ ソクド

Abstract

In order to obtain high deposition rate of Ni films, we have developed a modified magnetron sputtering cathode configuration with a ferromagnetic Ni target of 100 mm in diameter and 5 mm in thickness. The plasma confinement could be enhanced by providing four special permanent magnets around outside the cathode. Nickel films were prepared at the rf power of 100 to 200 W and the argon gas pressure of 6.7×10^-1 to 8.1×10^-2 Pa. The deposition rate was 14 nm/min, four times as large as that of a conventional magnetron sputtering at an rf power of 100 W and an argon gas pressure of 6.7×10^-1Pa.

Journal

• Shinku

  Shinku 43 (3), 311-313, 2000

  The Vacuum Society of Japan

Keywords

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

Details

• CRID: 1390282679040317952
• NII Article ID: 10004561745
• NII Book ID: AN00119871
• DOI: 10.3131/jvsj.43.311
• ISSN: 18809413
• ISSN: 05598516
• NDL BIB ID: 5361445
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5361445
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed