GaAs(100)を基板としたInSb/CdTe単一量子井戸構造の分子線エピタキシャル成長 Molecular Beam Epitaxial Growth of the InSb/CdTe Single Quantum Well Structures on GaAs(100) Substrates
This paper describes structural and optical properties of InSb/CdTe single quantum wells (SQWs) grown on GaAs (100) substrates by molecular beam epitaxy. The CdTe films on GaAs contained many defects due to the large lattice mismatch, and In-Te related compounds were easily formed at the InSb/CdTe heterointerface. Photoluminescence and atomic force microscopy measurements revealed that the poor crystallographic quality of the CdTe layer was improved by using a CdTe/MnTe superlattice as a buffer layer. It was also revealed that low-temperature growth combined with a post annealing was effective to improve the InSb/CdTe quality by avoiding the interfacial reaction. As a result, we achieved InSb/CdTe SQWs of which blue shift of absorption edge was reasonably explained by Burstein-Moss shift.
真空 43(3), 333-336, 2000-03-20
The Vacuum Society of Japan