GaAs(100)を基板としたInSb/CdTe単一量子井戸構造の分子線エピタキシャル成長 Molecular Beam Epitaxial Growth of the InSb/CdTe Single Quantum Well Structures on GaAs(100) Substrates

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This paper describes structural and optical properties of InSb/CdTe single quantum wells (SQWs) grown on GaAs (100) substrates by molecular beam epitaxy. The CdTe films on GaAs contained many defects due to the large lattice mismatch, and In-Te related compounds were easily formed at the InSb/CdTe heterointerface. Photoluminescence and atomic force microscopy measurements revealed that the poor crystallographic quality of the CdTe layer was improved by using a CdTe/MnTe superlattice as a buffer layer. It was also revealed that low-temperature growth combined with a post annealing was effective to improve the InSb/CdTe quality by avoiding the interfacial reaction. As a result, we achieved InSb/CdTe SQWs of which blue shift of absorption edge was reasonably explained by Burstein-Moss shift.

収録刊行物

  • 真空  

    真空 43(3), 333-336, 2000-03-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10004561790
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    5361522
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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