Molecular Beam Epitaxial Growth of the InSb/CdTe Single Quantum Well Structures on GaAs (100) Substrates.

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  • ＧａＡｓ（１００）を基板としたＩｎＳｂ／ＣｄＴｅ単一量子井戸構造の分子線エピタキシャル成長
  • GaAs 100 オ キバン ト シタ InSb CdTce タンイツ リョウシ イド コウゾウ ノ ブンシセン エピタキシャル セイチョウ

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Abstract

This paper describes structural and optical properties of InSb/CdTe single quantum wells (SQWs) grown on GaAs (100) substrates by molecular beam epitaxy. The CdTe films on GaAs contained many defects due to the large lattice mismatch, and In-Te related compounds were easily formed at the InSb/CdTe heterointerface. Photoluminescence and atomic force microscopy measurements revealed that the poor crystallographic quality of the CdTe layer was improved by using a CdTe/MnTe superlattice as a buffer layer. It was also revealed that low-temperature growth combined with a post annealing was effective to improve the InSb/CdTe quality by avoiding the interfacial reaction. As a result, we achieved InSb/CdTe SQWs of which blue shift of absorption edge was reasonably explained by Burstein-Moss shift.

Journal

  • Shinku

    Shinku 43 (3), 333-336, 2000

    The Vacuum Society of Japan

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