三フッ化窒素／酸素混合ガスプラズマによるポリイミドフィルムのエッチング機構

• 岩森 暁

  三井化学 (株) マテリアルサイエンス研究所

• 奈良 亮介

• 柳川 紀行

• 貞本 満

書誌事項

タイトル別名

• Etching Mechanism of Polyimide Film with Nitrogen Trifluoride/Oxygen Gas Plasma.
• サン フッカ チッソ サンソ コンゴウ ガスプラズマ ニ ヨル ポリィミド フィルム ノ エッチング キコウ

抄録

Oxygen mixed with nitrogen trifluoride (NF₃) was used for the gas source of the plasma etching to improve the etching rate of the polyimide (PI) film.<BR>In order to investigate this etching mechanism, the etching products were analyzed with quadrupole mass spectrometer (QMS), and gas chromatography. From these analyses, main products were assumed to be H₂O, HF, CO, and CO₂. Moreover, the CO/CO₂ ratio was seemed to be related with etching rate depending on the NF₃ concentration. In the PI etching mechanism, the cracking process of the benzene rings is seemed to be important. There would be a rate-limiting step in the PI cracking with O₂ plasma. Formation of phenol groups would prevent breakdown of the benzene rings. On the other hand, this rate-limiting step would not exist in the breakdown process of benzene rings in the NF₃/O₂ plasma. The role of NF₃ is predicted to construct oxygen addition sites and reproduce oxygen which is an etchant of the PI.

収録刊行物

• 真空

  真空 43 (4), 518-523, 2000

  一般社団法人 日本真空学会

キーワード

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

詳細情報

• CRID: 1390001204064338688
• NII論文ID: 10004562233
• NII書誌ID: AN00119871
• DOI: 10.3131/jvsj.43.518
• ISSN: 18809413
• ISSN: 05598516
• NDL書誌ID: 5367442
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5367442
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可