シリコン成長における固液界面の温度勾配と熱バランス Temperature Gradient and Heat Balance at the Solid-liquid Interface in CZ Silicon Growth
Heat balance and temperature gradient at solid liquid interface in CZ silicon growth is examined. Contribution of heat transfer due to mass transport and radiative heat flow to total heat balance is calculated to be about 10% of that of latent heat. Measurement problem is briefly discussed. The relation between the temperature gradient and the growth rate is quantitatively analyzed using the heat balance equation.
真空 43(5), 603-606, 2000-05-20
The Vacuum Society of Japan