Pb(Zr, Ti)O_3薄膜の低温・高速堆積用の固体酸素供給源による反応性スパッタ法の提案 Propose of Reactive Sputtering using Solid Oxygen Source for Low-Temperature and High Deposition Rate Fabrication of Pb(Zr, Ti)O_3 Thin Film
A new film deposition technique by reactive sputtering using a metal-oxide combined targe (ZrTi + PbO) was proposed and the film growth mechanism was discussed. By the technique perovskite Pb (Zr, Ti) O<SUB>3</SUB> (PZT) films could be grown at a substrate temperature as low as 450°C. Oxygen atoms for the reactive sputtering was not supplied from introduced O<SUB>2</SUB> gas but from the PbO oxide target. The oxygen flux from the PbO solid source plays an important role to crystallize the perovskite PZT films.
真空 43(8), 785-789, 2000-08-20
The Vacuum Society of Japan