Influence of Hydrogen in a-Si on Recrystallization of Low-Temperature Processed Poly-Si Film by Excimer Laser Annealing
In this paper, it is shown by Raman spectroscopy that hydrogens with a concentration of 4×10<SUP>21</SUP> cm<SUP>-3</SUP> in amorphous-Si lower the laser energy density of excimer laser annealing (ELA) for the recrystallization of poly-Si film which is deposited by plasma enhanced chemical vapor deposition (PE-CVD) followed by ELA. This activation mechanism is also discussed by the model that the time when the strain energy reaches the critical value at which the secondary recrystallization begins decreases because of the suppression of the vacancy mobility by the hydrogens in the film.
真空 43(8), 801-805, 2000-08-20
The Vacuum Society of Japan