Influence of Hydrogen in a-Si on Recrystallization of Low-Temperature Processed Poly-Si Film by Excimer Laser Annealing

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In this paper, it is shown by Raman spectroscopy that hydrogens with a concentration of 4×10<SUP>21</SUP> cm<SUP>-3</SUP> in amorphous-Si lower the laser energy density of excimer laser annealing (ELA) for the recrystallization of poly-Si film which is deposited by plasma enhanced chemical vapor deposition (PE-CVD) followed by ELA. This activation mechanism is also discussed by the model that the time when the strain energy reaches the critical value at which the secondary recrystallization begins decreases because of the suppression of the vacancy mobility by the hydrogens in the film.

収録刊行物

  • 真空

    真空 43(8), 801-805, 2000-08-20

    The Vacuum Society of Japan

参考文献:  9件中 1-9件 を表示

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各種コード

  • NII論文ID(NAID)
    10004562726
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    05598516
  • NDL 記事登録ID
    5476123
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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