Influence of Hydrogen in a-Si on Recrystallization of Low-Temperature Processed Poly-Si Film by Excimer Laser Annealing.
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- MATSUO Naoto
- Department of Electrical & Electronic Engineering, Yamaguchi University
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- AYA Youichiro
- Microelectronics Research Center, SANYO Electric Co. Ltd
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- KAWAMOTO Naoya
- Department of Electrical & Electronic Engineering, Yamaguchi University
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- NOUDA Tomoyuki
- Microelectronics Research Center, SANYO Electric Co. Ltd
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- HAMADA Hiroki
- Microelectronics Research Center, SANYO Electric Co. Ltd
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- MIYOSHI Tadaki
- Department of Electrical & Electronic Engineering, Yamaguchi University
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Abstract
In this paper, it is shown by Raman spectroscopy that hydrogens with a concentration of 4×1021 cm-3 in amorphous-Si lower the laser energy density of excimer laser annealing (ELA) for the recrystallization of poly-Si film which is deposited by plasma enhanced chemical vapor deposition (PE-CVD) followed by ELA. This activation mechanism is also discussed by the model that the time when the strain energy reaches the critical value at which the secondary recrystallization begins decreases because of the suppression of the vacancy mobility by the hydrogens in the film.
Journal
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- Shinku
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Shinku 43 (8), 801-805, 2000
The Vacuum Society of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282679040232960
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- NII Article ID
- 10004562726
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- NII Book ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL BIB ID
- 5476123
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed