Influence of Hydrogen in a-Si on Recrystallization of Low-Temperature Processed Poly-Si Film by Excimer Laser Annealing.

• MATSUO Naoto

  Department of Electrical & Electronic Engineering, Yamaguchi University

• AYA Youichiro

  Microelectronics Research Center, SANYO Electric Co. Ltd

• KAWAMOTO Naoya

  Department of Electrical & Electronic Engineering, Yamaguchi University

• NOUDA Tomoyuki

  Microelectronics Research Center, SANYO Electric Co. Ltd

• HAMADA Hiroki

  Microelectronics Research Center, SANYO Electric Co. Ltd

• MIYOSHI Tadaki

  Department of Electrical & Electronic Engineering, Yamaguchi University

抄録

In this paper, it is shown by Raman spectroscopy that hydrogens with a concentration of 4×10²¹ cm^-3 in amorphous-Si lower the laser energy density of excimer laser annealing (ELA) for the recrystallization of poly-Si film which is deposited by plasma enhanced chemical vapor deposition (PE-CVD) followed by ELA. This activation mechanism is also discussed by the model that the time when the strain energy reaches the critical value at which the secondary recrystallization begins decreases because of the suppression of the vacancy mobility by the hydrogens in the film.

収録刊行物

• 真空

  真空 43 (8), 801-805, 2000

  一般社団法人 日本真空学会

キーワード

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

詳細情報

• CRID: 1390282679040232960
• NII論文ID: 10004562726
• NII書誌ID: AN00119871
• DOI: 10.3131/jvsj.43.801
• ISSN: 18809413
• ISSN: 05598516
• NDL書誌ID: 5476123
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5476123
• 本文言語コード: en
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