集束イオンビームプロセスを用いて製作したSiエミッタの電界放射特性 [in Japanese] Field Emission Characteristics from Si Emitter Formed by Focused Ion Beams [in Japanese]
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The field emission characteristics from an n-type Si field emitter formed by focused ion beams (FIB) milling process were investigated. The n-type Si emitter was sharpened by circularly scanned Ga<SUP>+</SUP> ions to reduce the radius apex to about 10 nm. The emission characteristics from the emittr were strongly affected by the annealing temperature. The slope of Fowler-Nordheim (F-N) plots and pre-exponential factor of F-N equation were small without annealing process. Both of them increased remarkably with increases in the annealing temperature. The F-N plots of the emitter annealed at 670°C showed slight saturation tendency at high applied voltage region, which was commonly observed from p-type Si emitter. After field evaporation of the emitter surface, the slope of the F-N plots had an inclination to become a linear.
- Journal of the Vacuum Society of Japan
Journal of the Vacuum Society of Japan 43(8), 817-819, 2000-08-20
The Vacuum Society of Japan