集束イオンビームプロセスを用いて製作したSiエミッタの電界放射特性 Field Emission Characteristics from Si Emitter Formed by Focused Ion Beams

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抄録

The field emission characteristics from an n-type Si field emitter formed by focused ion beams (FIB) milling process were investigated. The n-type Si emitter was sharpened by circularly scanned Ga<SUP>+</SUP> ions to reduce the radius apex to about 10 nm. The emission characteristics from the emittr were strongly affected by the annealing temperature. The slope of Fowler-Nordheim (F-N) plots and pre-exponential factor of F-N equation were small without annealing process. Both of them increased remarkably with increases in the annealing temperature. The F-N plots of the emitter annealed at 670°C showed slight saturation tendency at high applied voltage region, which was commonly observed from p-type Si emitter. After field evaporation of the emitter surface, the slope of the F-N plots had an inclination to become a linear.

収録刊行物

  • 真空  

    真空 43(8), 817-819, 2000-08-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10004562751
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    5476156
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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