Seeding Effect of Ti-layer on Lead Zirconate Titanate(PZT) Thin Films Deposited by Facing Target Sputtering
The PZT thin films with highly (111) oriented perovskite phase have been prepared on Ti-layer seeding platinized silicon at such a low substrate temperature as 200°C by facing target sputtering. The seeding mechanism of titanium layer and the crystallograghic characteristics of samples were investigated in this paper.
真空 42(5), 577-580, 1999-05-20
The Vacuum Society of Japan