Seeding Effect of Ti-layer on Lead Zirconate Titanate(PZT) Thin Films Deposited by Facing Target Sputtering
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The PZT thin films with highly (111) oriented perovskite phase have been prepared on Ti-layer seeding platinized silicon at such a low substrate temperature as 200°C by facing target sputtering. The seeding mechanism of titanium layer and the crystallograghic characteristics of samples were investigated in this paper.
- Journal of the Vacuum Society of Japan
Journal of the Vacuum Society of Japan 42(5), 577-580, 1999-05-20
The Vacuum Society of Japan