Seeding Effect of Ti-layer on Lead Zirconate Titanate (PZT) Thin Films Deposited by Facing Target Sputtering.

• LI Xin-Shan

  Shanghai University

• TANAKA Tsunehisa

  Technology Research Institute of Osaka Prefecture

• SUZUKI Yoshihiko

  Technology Research Institute of Osaka Prefecture

抄録

The PZT thin films with highly (111) oriented perovskite phase have been prepared on Ti-layer seeding platinized silicon at such a low substrate temperature as 200°C by facing target sputtering. The seeding mechanism of titanium layer and the crystallograghic characteristics of samples were investigated in this paper.

収録刊行物

• 真空

  真空 42 (5), 577-580, 1999

  一般社団法人 日本真空学会

キーワード

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

詳細情報

• CRID: 1390282679042521984
• NII論文ID: 10004567999
• NII書誌ID: AN00119871
• DOI: 10.3131/jvsj.42.577
• ISSN: 18809413
• ISSN: 05598516
• NDL書誌ID: 4761230
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4761230
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可