半導体レーザ分光によるステンレス上吸着水とトリクロロシランの不均一系反応の研究 Study of Heterogenious Reaction between SiHCl_3 and Adsorbed H_2O on Stainless Steel Surface by Laser Diode Spectroscopy
HCl generation by heterogenious reaction between SiHCl<SUB>3</SUB> and adsorbed H<SUB>2</SUB>O on a surface of SUS filter is measured by laser diode spectroscopy. H<SUB>2</SUB>O concentration on the filter surface is conditioned by heating up the filter, followed by supplying HCl and H<SUB>2</SUB>O at the same time. This process prepares nearly mono-molecular H<SUB>2</SUB>O adsorption layer on the filter surface. The amount of HCl generated by SiHCl<SUB>3</SUB> flow on the surface with H<SUB>2</SUB>O adsorption is 2 orders of magnitude higher than that expected by the reaction; 2SiHCl<SUB>3</SUB> + H<SUB>2</SUB>O→+SiHCl<SUB>2</SUB>-O-SiHCl<SUB>2</SUB>+ 2HCl.<BR>Furthermore, similar HCl generation is found when SiHCl<SUB>3</SUB> is firstly used after cylinder installation with standard purging process. These results strongly suggests that a very small amount of H<SUB>2</SUB>O can initiate a chain reaction involving SiHCl<SUB>3</SUB>, which may brings about a hazardous by-products on semiconductor processes.
真空 42(6), 628-632, 1999-06-20
The Vacuum Society of Japan