大電流酸素イオン注入用マイクロ波イオン源の特性 Characteristics of a High Current Microwave Ion Source for Oxygen Ion Implanter
Separation by Implanted Oxygen (SIMOX) wafer is recognized as one of the promising Silicon on Insulator (SOI) substrates to be used for next generation semiconductor device fabrication. Since high dose O<SUP>+</SUP> implantation of about 4 × 10<SUP>17</SUP> ions/cm<SUP>2</SUP> is conventionally carried out in SIMOX wafer fabrication process, the use of very highcurrent ion beams is indispensable for volume production. This report describes characteristics of a new high-current microwave ion source which contains a specially-designed transform waveguide and a cylindrical plasma chamber. Oxygen ion beams of 240 mA could be extracted with multi-aperture electrode system. The data indicates that this source has a good potential to increase SOI substrate throughput.
真空 42(7), 670-675, 1999-07-20
The Vacuum Society of Japan