大電流酸素イオン注入用マイクロ波イオン源の特性 [in Japanese] Characteristics of a High Current Microwave Ion Source for Oxygen Ion Implanter [in Japanese]
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Separation by Implanted Oxygen (SIMOX) wafer is recognized as one of the promising Silicon on Insulator (SOI) substrates to be used for next generation semiconductor device fabrication. Since high dose O<SUP>+</SUP> implantation of about 4 × 10<SUP>17</SUP> ions/cm<SUP>2</SUP> is conventionally carried out in SIMOX wafer fabrication process, the use of very highcurrent ion beams is indispensable for volume production. This report describes characteristics of a new high-current microwave ion source which contains a specially-designed transform waveguide and a cylindrical plasma chamber. Oxygen ion beams of 240 mA could be extracted with multi-aperture electrode system. The data indicates that this source has a good potential to increase SOI substrate throughput.
- Journal of the Vacuum Society of Japan
Journal of the Vacuum Society of Japan 42(7), 670-675, 1999-07-20
The Vacuum Society of Japan