大電流酸素イオン注入用マイクロ波イオン源の特性

• 関 孝義

  日立製作所電力・電機・開発研究所

• 登木口 克己

  日立製作所電力・電機・開発研究所

書誌事項

タイトル別名

• Characteristics of a High Current Microwave Ion Source for Oxygen Ion Implanter.
• ダイ デンリュウ サンソ イオン チュウニュウヨウ マイクロハ イオンゲン ノ トクセイ

抄録

Separation by Implanted Oxygen (SIMOX) wafer is recognized as one of the promising Silicon on Insulator (SOI) substrates to be used for next generation semiconductor device fabrication. Since high dose O⁺ implantation of about 4 × 10¹⁷ ions/cm² is conventionally carried out in SIMOX wafer fabrication process, the use of very highcurrent ion beams is indispensable for volume production. This report describes characteristics of a new high-current microwave ion source which contains a specially-designed transform waveguide and a cylindrical plasma chamber. Oxygen ion beams of 240 mA could be extracted with multi-aperture electrode system. The data indicates that this source has a good potential to increase SOI substrate throughput.

収録刊行物

• 真空

  真空 42 (7), 670-675, 1999

  一般社団法人 日本真空学会

キーワード

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

詳細情報

• CRID: 1390282679040960768
• NII論文ID: 10004568161
• NII書誌ID: AN00119871
• DOI: 10.3131/jvsj.42.670
• ISSN: 18809413
• ISSN: 05598516
• ISSN: http://id.crossref.org/issn/05598516
• NDL書誌ID: 4799986
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4799986
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可