SiおよびSi化合物表面からのSiクラスタ-の熱脱離(I)-Si表面上でのSiクラスタ-の自発的形成とTa表面上での解離- [in Japanese] Thermal Desorption of Si Clusters from Si and Si-compound Surfaces(I)-Spontaneous Formation of Si Clusters on Si Surface and Dissociation on Ta Surface- [in Japanese]
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Using quadrupole mass spectrometry, we observed thermal desorption of Si clusters from Si and Si-deposited Ta surfaces. From Si surfaces, desorption of monomers and clusters up to Sib occurred at 1000-1300°C. From Ta surfaces, on the other hands, only Si monomers desorbed at 1300-1700°C, showing that the large cohesive energy of Si with Ta suppresses the cluster desorption. This indicates that Ta surfaces facilitate elimination of clusters from Si vapor to obtain a purely monoatomic beam. It is also discussed that the desorption rate of each species is thermodynamically governed by the formation energy.
- Journal of the Vacuum Society of Japan
Journal of the Vacuum Society of Japan 42(8), 749-755, 1999-08-20
The Vacuum Society of Japan