自己形成的に分子線エピタキシャル成長したＩｎＡｓ／ＧａＡｓ多重積層量子ドットからのエキシトン発光

• 小池 一歩

  大阪工業大学新材料研究センター

• 矢野 満明

  大阪工業大学新材料研究センター

書誌事項

タイトル別名

• Exciton Localization at the Vertically Stacked InAs/GaAs Quantum Dots Grown by Self-Assembled Molecular-Beam Epitaxy.
• ジコ ケイセイテキ ニ ブンシセン エピタキシャル セイチョウ シタ InAs GaAs タジュウ セキソウ リョウシ ドット カラ ノ エキシトン ハッコウ

抄録

This paper describes temperature effect on the exciton localization at vertically stacked InAs quantum dots (QDs). These QDs were grown on (100) -oriented GaAs by using the self-assembling growth mode in molecular beam epitaxy. Thermal quenching energy for the emission from the excitons localized at 5-stacked QDs was found to be8.5 meV, which was 3.5 times larger than the value for those at single-layered QDs. However, the QD size on upper layers of the stacked structure was revealed to become larger with the number of the stacking periods. By employing a size-controlled growth for the upper QDs, the thermal quenching energy was increased to13 meV. It is also shown that a post-annealing for the size-controlled QDs is effective to increase both the thermal quenching energy and the thermionic energy of the excitons. These effects are probably attributed to the reduction of nonradiative recombination centers and the improvement of dot-array uniformity in the stacked QD structure.

収録刊行物

• 真空

  真空 42 (8), 756-763, 1999

  一般社団法人 日本真空学会

キーワード

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

詳細情報

• CRID: 1390282679040520960
• NII論文ID: 10004568327
• NII書誌ID: AN00119871
• DOI: 10.3131/jvsj.42.756
• ISSN: 18809413
• ISSN: 05598516
• NDL書誌ID: 4850476
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4850476
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可