部分一括露光方式電子ビームリソグラフィ用シュミレータの開発 Development of a Simulator for Cell-projection Type Electron Beam Lithography

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著者

    • 松岡 晃次 [他] MATSUOKA Koji
    • Electron Beam Direct Writing Group, Semiconductor Leading Edge Technologies Electron Beam Direct Writing Group, Semiconductor Leading Edge Technologies, Inc.
    • 岡川 崇 OKAGAWA Takashi
    • Electron Beam Direct Writing Group, Semiconductor Leading Edge Technologies Electron Beam Direct Writing Group, Semiconductor Leading Edge Technologies, Inc.
    • 小島 義則 KOJIMA Yoshinori
    • Electron Beam Direct Writing Group, Semiconductor Leading Edge Technologies Electron Beam Direct Writing Group, Semiconductor Leading Edge Technologies, Inc.
    • 山部 正樹 YAMABE Masaki
    • Electron Beam Direct Writing Group, Semiconductor Leading Edge Technologies Electron Beam Direct Writing Group, Semiconductor Leading Edge Technologies, Inc.

抄録

We developed a Monte Carlo simulation of electron trajectories in a cell-projection electron beam lithography optical system. In the simulation the emission angle, the velocity and the emission timing of electrons from the electron gun are taking into account. The Coulomb interaction among electrons in the beam is calculated. There are five lenses in the system. Assuming that the stencil mask pattern is a series of line-and-space, the exposure pattern is obtained when the current densities are 5, 10, and 13 A/cm<SUP>2</SUP> at the specimen surface. The probability of electrons to enter the designed pattern as a function of the defocusing distance are calculated. The best refocus length is obtained to give the maximum probability in the designed pattern at the specimen surface.

収録刊行物

  • 真空  

    真空 42(8), 764-767, 1999-08-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10004568346
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    4850483
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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