Real-Time Ellipsometric Measurement during Growth of (AlXGa1-X)0.52In0.48P Thin Films

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We obtained ellipsometric data during the growth of (Al XGa1- X)0.52In0.48P thin films in real time. We have developed a rotating-analyzer ellipsometer and applied it to an MBE system. It is confirmed that ellipsometry is a good system for monitoring thin film quality and that it can be used to determine the composition ratio from the optical constants of (Al XGa1- X)0.52In0.48P films grown on GaAs. The thickness and optical constants of a Ga0.52In0.48P/(Al0.4Ga0.6)0.52In0.48P superlattice structure were calculated from ellipsometric data. The average thickness of Ga0.52In0.48P multi-quantum well layers determined by ellipsometry and that determined by photoluminescence showed good agreement. From observation of the surface roughness, it is suggested that a surface roughness of about 6 monolayers was present immediately after the start of growth, and that the surface became planar with time.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 35(9A), 4595-4598, 1996-09-15 

    Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyo

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各種コード

  • NII論文ID(NAID)
    10004612805
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    4060128
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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