Real-Time Ellipsometric Measurement during Growth of (AlXGa1-X)0.52In0.48P Thin Films
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We obtained ellipsometric data during the growth of (Al XGa1- X)0.52In0.48P thin films in real time. We have developed a rotating-analyzer ellipsometer and applied it to an MBE system. It is confirmed that ellipsometry is a good system for monitoring thin film quality and that it can be used to determine the composition ratio from the optical constants of (Al XGa1- X)0.52In0.48P films grown on GaAs. The thickness and optical constants of a Ga0.52In0.48P/(Al0.4Ga0.6)0.52In0.48P superlattice structure were calculated from ellipsometric data. The average thickness of Ga0.52In0.48P multi-quantum well layers determined by ellipsometry and that determined by photoluminescence showed good agreement. From observation of the surface roughness, it is suggested that a surface roughness of about 6 monolayers was present immediately after the start of growth, and that the surface became planar with time.
- Jpn J Appl Phys
Jpn J Appl Phys 35(9A), 4595-4598, 1996-09-15
INSTITUTE OF PURE AND APPLIED PHYSICS