Real-Time Ellipsometric Measurement during Growth of (AlXGa1-X)0.52In0.48P Thin Films
We obtained ellipsometric data during the growth of (Al XGa1- X)0.52In0.48P thin films in real time. We have developed a rotating-analyzer ellipsometer and applied it to an MBE system. It is confirmed that ellipsometry is a good system for monitoring thin film quality and that it can be used to determine the composition ratio from the optical constants of (Al XGa1- X)0.52In0.48P films grown on GaAs. The thickness and optical constants of a Ga0.52In0.48P/(Al0.4Ga0.6)0.52In0.48P superlattice structure were calculated from ellipsometric data. The average thickness of Ga0.52In0.48P multi-quantum well layers determined by ellipsometry and that determined by photoluminescence showed good agreement. From observation of the surface roughness, it is suggested that a surface roughness of about 6 monolayers was present immediately after the start of growth, and that the surface became planar with time.
- Japanese journal of applied physics. Pt. 1, Regular papers & short notes
Japanese journal of applied physics. Pt. 1, Regular papers & short notes 35(9A), 4595-4598, 1996-09-15
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyo