A Comparative Examination of Ion Implanted n+p Junctions Annealed at 1000°C and 450°C

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A comparative examination is presented between two series of As+ implanted junctions into (100) Si substrates with varying Boron concentration N s. The post-implantation annealing temperatures were 1000°C for one series and 450°C for the other. This is done in order to identify the specific cause for the inferior performance of the 450°C junctions which was shown to progressively degrade as N s increases. It is found that the increase in N t, the trapping centers concentration in the 450°C junctions is not the only reason for the above behavior and that the trend of E t, the trapping centers energy level with respect to E i, the intrinsic energy level is dominant. The data show that in contrast to the 1000°C junctions, $\mid E_{\rm t} - E_{\rm i} \mid$ decreases with increasing N s in the 450°C junctions, increasing the generation rate, resulting the inferior performance. Junctions in 1.6×1014 cm-3 substrates, outstandingly exhibit comparable performance in both annealing temperatures.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 35(9A), 4606-4617, 1996-09-15 

    Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyo

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各種コード

  • NII論文ID(NAID)
    10004612855
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    4060130
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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