# A Comparative Examination of Ion Implanted n+p Junctions Annealed at 1000°C and 450°C

## Abstract

A comparative examination is presented between two series of As+ implanted junctions into (100) Si substrates with varying Boron concentration N s. The post-implantation annealing temperatures were 1000°C for one series and 450°C for the other. This is done in order to identify the specific cause for the inferior performance of the 450°C junctions which was shown to progressively degrade as N s increases. It is found that the increase in N t, the trapping centers concentration in the 450°C junctions is not the only reason for the above behavior and that the trend of E t, the trapping centers energy level with respect to E i, the intrinsic energy level is dominant. The data show that in contrast to the 1000°C junctions, $\mid E_{\rm t} - E_{\rm i} \mid$ decreases with increasing N s in the 450°C junctions, increasing the generation rate, resulting the inferior performance. Junctions in 1.6×1014 cm-3 substrates, outstandingly exhibit comparable performance in both annealing temperatures.

## Journal

• Jpn J Appl Phys

Jpn J Appl Phys 35(9A), 4606-4617, 1996-09-15

INSTITUTE OF PURE AND APPLIED PHYSICS

## References:  29

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## Codes

• NII Article ID (NAID)
10004612855
• NII NACSIS-CAT ID (NCID)
AA10457675
• Text Lang
EN
• Article Type
ART
• Journal Type
大学紀要
• ISSN
0021-4922
• NDL Article ID
4060130
• NDL Source Classification
ZM35(科学技術--物理学)
• NDL Call No.
Z53-A375
• Data Source
CJP  NDL  JSAP

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