# A Comparative Examination of Ion Implanted n+p Junctions Annealed at 1000°C and 450°C

## 抄録

A comparative examination is presented between two series of As+ implanted junctions into (100) Si substrates with varying Boron concentration N s. The post-implantation annealing temperatures were 1000°C for one series and 450°C for the other. This is done in order to identify the specific cause for the inferior performance of the 450°C junctions which was shown to progressively degrade as N s increases. It is found that the increase in N t, the trapping centers concentration in the 450°C junctions is not the only reason for the above behavior and that the trend of E t, the trapping centers energy level with respect to E i, the intrinsic energy level is dominant. The data show that in contrast to the 1000°C junctions, $\mid E_{\rm t} - E_{\rm i} \mid$ decreases with increasing N s in the 450°C junctions, increasing the generation rate, resulting the inferior performance. Junctions in 1.6×1014 cm-3 substrates, outstandingly exhibit comparable performance in both annealing temperatures.

## 収録刊行物

• Japanese journal of applied physics. Pt. 1, Regular papers & short notes

Japanese journal of applied physics. Pt. 1, Regular papers & short notes 35(9A), 4606-4617, 1996-09-15

Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyo

## 各種コード

• NII論文ID(NAID)
10004612855
• NII書誌ID(NCID)
AA10457675
• 本文言語コード
EN
• 資料種別
ART
• 雑誌種別
大学紀要
• ISSN
0021-4922
• NDL 記事登録ID
4060130
• NDL 雑誌分類
ZM35(科学技術--物理学)
• NDL 請求記号
Z53-A375
• データ提供元
CJP書誌  NDL  JSAP

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