Pressure Effects on Electrical and Optical Properties of Si–As–Te Chalcogenide Glasses Fabricated in the Gravity Environment and in a Microgravity Environment

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Pressure-induced changes in the electrical resistivity and optical-absorption spectrum have been studied for two kinds of Si9As14Te21 ternary chalcogenide amorphous semiconductor samples fabricated in a microgravity environment and under the gravity environment of the earth. Band gap narrowing occurs for both materials as is found commonly in chalcogenide glasses, whereas the change is less pronounced for the space-made material than for the terrestrial-made material. A significant difference is found in the pressure-induced change of the optical Urbach energy, that is, it increases for the space-made material but decreases for the terrestrial-made material in the low-pressure regime. These observations are accounted for upon assuming that the origin of the electronic states at the top of the valence band differs for these two materials although the material composition is identical.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 35(9A), 4713-4717, 1996-09-15 

    Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyo

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各種コード

  • NII論文ID(NAID)
    10004613209
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    4060153
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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