Surface Characterization of Chemically Treated Cu(In, Ga)Se₂ Thin Films

• Hashimoto Yasuhiro

  Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan

• Kohara Naoki

  Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan

• Negami Takayuki

  Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan

• Nishitani Mikihiko

  Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan

• Wada Takahiro

  Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan

書誌事項

タイトル別名

• Surface Characterization of Chemically Treated Cu(In,Ga)Se2 Thin Films.
• Surface Characterization of Chemically

抄録

The surfaces of Cu-rich and stoichiometric (slightly [In, Ga]-rich) Cu(In, Ga)Se₂ (CIGS) thin films were investigated by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). At the surface of the Cu-rich and stoichiometric CIGS films, Cu_{2- x}Se and Cu(In, Ga)₃Se₅ exist, respectively. The films were treated using KCN and NH₃ aqueous solutions. In the Cu-rich film, the treatment in the KCN solution completely eliminated the Cu_{2- x}Se impurity and the treatment in the NH₃ solution removed Cu_{2- x}Se only at the front surface. In the stoichiometric CIGS film, the NH₃ treatment removed Cu(In, Ga)₃Se₅ from the surface. The recombination of the carriers occurs more in the heterojunction of the CdS/NH₃-treated CIGS system than in that of the CdS/as-deposited CIGS system.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 35 (9A), 4760-4764, 1996

  The Japan Society of Applied Physics

キーワード

• compound semiconductor
• solar cell
• CuInSe<SUB> 2</SUB>
• thin film
• surface characterization
• XPS
• surface treatment

詳細情報

• CRID: 1390282681226497024
• NII論文ID: 10004613381
• NII論文ID: 130004522863
• NII論文ID: 210000039689
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.35.4760
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• NDL書誌ID: 4060163
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4060163
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.35.4760
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.35.4760/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
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