Surface Characterization of Chemically Treated Cu(In, Ga)Se2 Thin Films

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The surfaces of Cu-rich and stoichiometric (slightly [In, Ga]-rich) Cu(In, Ga)Se2 (CIGS) thin films were investigated by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). At the surface of the Cu-rich and stoichiometric CIGS films, Cu2- xSe and Cu(In, Ga)3Se5 exist, respectively. The films were treated using KCN and NH3 aqueous solutions. In the Cu-rich film, the treatment in the KCN solution completely eliminated the Cu2- xSe impurity and the treatment in the NH3 solution removed Cu2- xSe only at the front surface. In the stoichiometric CIGS film, the NH3 treatment removed Cu(In, Ga)3Se5 from the surface. The recombination of the carriers occurs more in the heterojunction of the CdS/NH3-treated CIGS system than in that of the CdS/as-deposited CIGS system.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 35(9A), 4760-4764, 1996-09-15 

    Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyo

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各種コード

  • NII論文ID(NAID)
    10004613381
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    4060163
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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