A Clean GaP(001)4×2/c(8×2) Surface Structure Studied by Scanning Tunneling Microscopy and Ion Scattering Spectroscopy
We report the results of scanning tunneling microscopy and ion scattering spectroscopy investigation on the structure of GaP(001)4×2/c(8×2) surfaces prepared by ion bombardment and annealing methods. We found that the unit cell of the 4×2 structure consists of two Ga dimers with two dimer vacancies and that the atomic separation in the Ga dimer is about 0.27 ±0.01 nm.
- Japanese journal of applied physics. Pt. 1, Regular papers & short notes
Japanese journal of applied physics. Pt. 1, Regular papers & short notes 35(9A), 4789-4790, 1996-09-15
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyo