A Clean GaP(001)4×2/c(8×2)Surface Structure Studied by Scanning Tunneling Microscopy and Ion Scattering Spectroscopy

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  • Naitoh Masamichi
    Department of Electrical Engineering, Kyushu Institute of Technology, 1–1 Sensui, Tobata, Kitakyushu, Fukuoka 804, Japan
  • Watanabe Akihiko
    Department of Electrical Engineering, Kyushu Institute of Technology, 1–1 Sensui, Tobata, Kitakyushu, Fukuoka 804, Japan
  • Konishi Akira
    Department of Electrical Engineering, Kyushu Institute of Technology, 1–1 Sensui, Tobata, Kitakyushu, Fukuoka 804, Japan
  • Nishigaki Satoshi
    Department of Electrical Engineering, Kyushu Institute of Technology, 1–1 Sensui, Tobata, Kitakyushu, Fukuoka 804, Japan

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タイトル別名
  • A Clean GaP(001)4*2/c(8*2) Surface Structure Studied by Scanning Tunneling Microscopy and Ion Scattering Spectroscopy.
  • Clean GaP 001 4 2 c 8 2 Surface Structu

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We report the results of scanning tunneling microscopy and ion scattering spectroscopy investigation on the structure of GaP(001)4×2/c(8×2) surfaces prepared by ion bombardment and annealing methods. We found that the unit cell of the 4×2 structure consists of two Ga dimers with two dimer vacancies and that the atomic separation in the Ga dimer is about 0.27 ± 0.01 nm.

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